PT9001
Semiconductor Devices and Associated Hardware
TRANSISTOR
PT9001
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector to emitter, sustained and 8.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Length
1.252 inches maximum
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Inclosure Material
metal
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 pin and 1 case
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Test Data Document
82577-928446 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector preset
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Electrode Internally-Electrically Connected To Case
collector
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Overall Width
0.700 inches maximum
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Overall Height
0.340 inches maximum