JAN2N539A
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N539A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Special Features
supplied with a mating mica washer; insulating bushing and hex nut; junction pattern arrangement: npn
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Overall Diameter
0.537 inches minimum and 0.547 inches maximum
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Internal Configuration
junction contact
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Terminal Type And Quantity
3 tab, solder lug
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.164 inches
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Overall Height
0.350 inches minimum and 0.370 inches maximum
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 3.50 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 28.0 maximum breakdown voltage, emitter-to-base, collector open
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Semiconductor Material
germanium
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Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector minimum
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Inclosure Material
metal
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Overall Length
0.370 inches maximum
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Test Data Document
73030-525557 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)