2N268

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N268

5961-00-583-1025

5961 - Semiconductor Devices and Associated Hardware

Itt Semiconductors

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Semiconductor Material

    germanium

  • Current Rating Per Characteristic

    3.00 amperes maximum collector current, dc and 2.00 amperes maximum base current, dc

  • Special Features

    junction pattern arrangement: pnp

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Overall Length

    0.250 inches minimum and 0.450 inches maximum

  • Overall Diameter

    0.875 inches maximum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    80.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, emitter-to-base, collector open and 60.0 maximum breakdown voltage, collector-to-emitter, base open

  • Power Rating Per Characteristic

    45.0 watts maximum collector power dissipation

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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