JAN2N3791

Semiconductor Devices and Associated Hardware

TRANSISTOR

JAN2N3791

5961-00-595-8546

5961 - Semiconductor Devices and Associated Hardware

Texas Instruments Incorporated

TRANSISTOR

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Technical Characteristics

  • Overall Length

    0.375 inches nominal

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 7.0 maximum breakdown voltage, emitter-to-base, collector open

  • Inclosure Material

    metal

  • Mounting Method

    unthreaded hole

  • Special Features

    item must comply with requirements of desc production standard no. l01734; for navy nuclear propulsion plant products only; junction pattern arrangement: pnp

  • Mounting Facility Quantity

    2

  • Current Rating Per Characteristic

    4.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

  • Terminal Type And Quantity

    3 uninsulated wire lead and 1 case

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.875 inches maximum

  • Power Rating Per Characteristic

    150.0 watts small-signal input power, common-collector absolute

  • Criticality Code Justification

    feat

  • Electrode Internally-Electrically Connected To Case

    collector

Certified to
AS6081 Methods

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