2N6166
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6166
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Overall Height
0.280 inches maximum
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Overall Width
0.980 inches maximum
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Overall Length
1.050 inches maximum
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Precious Material And Location
internal metalization gold
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Voltage Rating In Volts Per Characteristic
35.0 minimum breakdown voltage, collector-to-emitter, base open and 65.0 minimum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 4.0 minimum breakdown voltage, emitter-to-base, collector open
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Inclosure Material
ceramic and metal
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Mounting Facility Quantity
2
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Current Rating Per Characteristic
9.00 milliamperes source cutoff current maximum and 30.00 milliamperes zero-gate-voltage source current preset
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Power Rating Per Characteristic
117.0 watts small-signal input power, common-collector absolute