JAN2N158

Semiconductor Devices and Associated Hardware

TRANSISTOR

JAN2N158

5961-00-615-0367

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Semiconductor Material

    germanium

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current maximum and 1.00 milliamperes zero-gate-voltage source current preset

  • Nominal Thread Size

    0.250 inches

  • Overall Length

    0.828 inches maximum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Facility Quantity

    1

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Thread Series Designator

    unf

  • Overall Diameter

    0.580 inches maximum

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, emitter-to-base, collector open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open

  • Special Features

    junction pattern arrangement: pnp

  • Internal Configuration

    junction contact

  • Power Rating Per Characteristic

    17.0 watts small-signal input power, common-collector minimum

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius ambient air

  • Mounting Method

    threaded hole

Certified to
AS6081 Methods

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