TIS58Y
Semiconductor Devices and Associated Hardware
TRANSISTOR
TIS58Y
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
25.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 25.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 15.0 maximum drain to source voltage
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Overall Width
0.175 inches minimum and 0.205 inches maximum
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Height
0.125 inches minimum and 0.165 inches maximum
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector absolute
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Current Rating Per Characteristic
4.00 milliamperes zero-gate-voltage source current watts
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Internal Configuration
field effect
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Overall Length
0.170 inches minimum and 0.210 inches maximum