2N173
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N173
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.520 inches maximum
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Special Features
junction pattern arrangement: pnp
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Diameter
1.250 inches maximum
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Semiconductor Material
germanium
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Current Rating Per Characteristic
4.00 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, emitter-to-base, collector open