G390080S2
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
G390080S2
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Power Rating Per Characteristic
150.0 milliwatts maximum total power dissipation
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Current Rating Per Characteristic
150.00 milliamperes maximum forward current,dc and 10.00 amperes maximum peak pulse current
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Junction Configuration
pnpn
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Overall Diameter
0.110 inches nominal
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Overall Length
0.290 inches nominal
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Terminal Type And Quantity
2 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Voltage Rating In Volts Per Characteristic
25.0 maximum reverse voltage,dc
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Internal Configuration
junction contact