86SV342
Semiconductor Devices and Associated Hardware
TRANSISTOR
86SV342
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
120.0 maximum collector to base voltage/static/emitter open and 100.0 maximum collector to emitter voltage/static/base open and 8.0 maximum emitter to base voltage, static, collector open
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Overall Length
0.535 inches maximum
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Thread Series Designator
unf
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Overall Width Across Flats
0.865 inches minimum and 0.875 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Nominal Thread Size
0.312 inches
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Overall Diameter
0.765 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector preset
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Inclosure Material
metal
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Current Rating Per Characteristic
20.00 amperes source cutoff current maximum
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Terminal Type And Quantity
2 uninsulated wire lead and 1 threaded stud