4JX4C807
Semiconductor Devices and Associated Hardware
TRANSISTOR
4JX4C807
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.335 inches maximum
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Internal Configuration
junction contact
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
ector to base voltage/static/emitter open and 1.0 maximum emitter to base voltag
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.260 inches maximum
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Terminal Length
1.500 inches minimum
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Internal Junction Configuration
npn
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~2
e, static, collector open
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Voltage Rating In Volts Per Characteristic
45.0 maximum collector to emitter voltage/static/base open and 45.0 maximum coll
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Current Rating Per Characteristic
25.00 milliamperes maximum collector current, dc
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Power Rating Per Characteristic
100.0 milliwatts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air