2N550
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N550
5961 - Semiconductor Devices and Associated Hardware
General Semiconductor Industries Inc
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Overall Diameter
0.335 inches minimum and 0.370 inches maximum
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Terminal Length
1.500 inches minimum
-
Overall Length
0.240 inches minimum and 0.260 inches maximum
-
Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector minimum
-
Current Rating Per Characteristic
800.00 milliamperes source cutoff current maximum and 15.00 microamperes zero-gate-voltage source current preset
-
Inclosure Material
metal