2N1197

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N1197

5961-00-689-8722

5961 - Semiconductor Devices and Associated Hardware

L-3 Communications Electron

TRANSISTOR

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Technical Characteristics

  • Power Rating Per Characteristic

    350.0 milliwatts small-signal input power, common-collector absolute

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Special Features

    junction pattern arrangement: pnp

  • Overall Length

    0.260 inches maximum

  • Current Rating Per Characteristic

    -100.00 milliamperes source cutoff current maximum

  • Overall Diameter

    0.370 inches maximum

  • Voltage Rating In Volts Per Characteristic

    -70.0 maximum collector to base voltage/static/emitter open and -70.0 maximum collector to emitter voltage/static/base open and -4.0 maximum emitter to base voltage, static, collector open

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Specification/Standard Data

    80131-release3403 professional/industrial association specification

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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