2N652
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N652
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Junction Configuration
pnp
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 30.0 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Terminal Length
1.500 inches minimum
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum and 10.00 microamperes zero-gate-voltage source current preset
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Semiconductor Material
germanium