2N1234
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1234
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
400.0 milliwatts maximum collector power dissipation
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Current Rating Per Characteristic
1.00 milliamperes maximum emitter current,dc
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Terminal Type And Quantity
3 uninsulated wire lead
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Junction Configuration
pnp
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Internal Configuration
junction contact
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Overall Height
0.240 inches minimum and 0.260 inches maximum
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Voltage Rating In Volts Per Characteristic
110.0 maximum breakdown voltage,collector-to-base,emitter open and 110.0 maximum breakdown voltage,collector-to-emitter,base open and 110.0 maximum breakdown voltage,emitter-to-base,collector open