2N1599
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N1599
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Special Features
junction pattern arrangement: pnpn
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Terminal Length
1.500 inches minimum
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Current Rating Per Characteristic
1.00 amperes forward current, total rms nanoamperes and 15.00 amperes forward current, total rms watts
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
anode
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Voltage Rating In Volts Per Characteristic
3.0 maximum gate trigger voltage, dc and 2.0 maximum on-state voltage, dc
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Maximum Operating Temp Per Measurement Point
129.0 deg celsius case
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Terminal Type And Quantity
3 uninsulated wire lead