2N2781
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2781
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
15.0 watts maximum collector power dissipation
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Voltage Rating In Volts Per Characteristic
75.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open and 75.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter
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Mounting Method
terminal
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Overall Diameter
0.500 inches minimum and 0.650 inches maximum
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Overall Length
0.270 inches minimum and 0.330 inches maximum
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Inclosure Material
metal
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Terminal Type And Quantity
3 uninsulated wire lead
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Current Rating Per Characteristic
2.00 amperes maximum collector current, dc and 500.00 microamperes maximum collector cutoff current, dc, emitter open
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.272 inches minimum and 0.292 inches maximum
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Internal Junction Configuration
npn
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Internal Configuration
junction contact
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Terminal Length
0.360 inches minimum and 0.440 inches maximum