2N2318
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2318
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage,collector-to-base,emitter open and 5.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
1.00 microamperes maximum collector cutoff current,dc,emitter open
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Terminal Type And Quantity
3 uninsulated wire lead
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Specification/Standard Data
80131-release4242 professional/industrial association specification
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Power Rating Per Characteristic
360.0 milliwatts maximum collector power dissipation
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Terminal Circle Diameter
0.100 inches nominal
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Length
0.210 inches maximum