2N3112
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3112
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
1 case and 3 uninsulated wire lead
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Semiconductor Material
silicon
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Power Rating Per Characteristic
300.0 milliwatts maximum total device dissipation
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Current Rating Per Characteristic
10.00 milliamperes maximum off-state current, dc and 10.00 milliamperes maximum gate current
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Voltage Rating In Volts Per Characteristic
5.0 maximum drain to source voltage and 20.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
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Mounting Method
terminal
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Channel Polarity And Control Type
p-channel junction type
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Internal Configuration
field effect
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Overall Diameter
0.230 inches maximum
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Overall Length
0.210 inches maximum
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.100 inches nominal
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Electrode Internally-Electrically Connected To Case
drain
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Terminal Length
0.500 inches minimum
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Inclosure Material
metal