2N312
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N312
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Specification/Standard Data
80131-release1834 professional/industrial association specification
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Power Rating Per Characteristic
75.0 milliwatts small-signal input power, common-collector minimum
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Semiconductor Material
germanium
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Inclosure Material
metal
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Current Rating Per Characteristic
60.00 microamperes zero-gate-voltage source current preset and 10.00 milliamperes source cutoff current blank
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Overall Diameter
0.300 inches minimum and 0.340 inches maximum
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Terminal Length
1.500 inches minimum and 1.600 inches maximum
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Overall Length
0.180 inches minimum and 0.230 inches maximum
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Terminal Circle Diameter
0.192 inches minimum and 0.208 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
15.0 maximum breakdown voltage, collector-to-emitter, base open and 15.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open