2N3076

Technical Characteristics

• Voltage Rating In Volts Per Characteristic

  50.0 maximum breakdown voltage, collector-to-emitter, base open and 140.0 maximum breakdown voltage, collector-to-base, emitter open and 100.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 5.0

• ~1

  maximum breakdown voltage, emitter-to-base, colle

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Thread Series Designator

  unf

• Terminal Type And Quantity

  1 solder stud and 2 pin

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector preset

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Current Rating Per Characteristic

  10.00 amperes source cutoff current maximum

• Semiconductor Material

  silicon

• Nominal Thread Size

  0.312 inches

• Inclosure Material

  metal

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Overall Diameter

  1.300 inches maximum

• Overall Length

  0.415 inches maximum