2N3076

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3076

5961-00-717-2891

5961 - Semiconductor Devices and Associated Hardware

Trw Electronics And Defense Sector

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, collector-to-emitter, base open and 140.0 maximum breakdown voltage, collector-to-base, emitter open and 100.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 5.0

  • ~1

    maximum breakdown voltage, emitter-to-base, colle

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Thread Series Designator

    unf

  • Terminal Type And Quantity

    1 solder stud and 2 pin

  • Power Rating Per Characteristic

    125.0 watts small-signal input power, common-collector preset

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current maximum

  • Semiconductor Material

    silicon

  • Nominal Thread Size

    0.312 inches

  • Inclosure Material

    metal

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius junction

  • Overall Diameter

    1.300 inches maximum

  • Overall Length

    0.415 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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