11252843
Semiconductor Devices and Associated Hardware
TRANSISTOR
11252843
5961 - Semiconductor Devices and Associated Hardware
Ballistic Missile Defense Systems
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Technical Characteristics
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Current Rating Per Characteristic
2.50 amperes source cutoff current maximum
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Inclosure Material
metal
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Power Rating Per Characteristic
18.0 watts small-signal input power, common-collector minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Diameter
0.320 inches minimum and 0.360 inches maximum
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Semiconductor Material
silicon
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Overall Length
0.215 inches minimum and 0.320 inches maximum
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Voltage Rating In Volts Per Characteristic
4.0 maximum breakdown voltage, emitter-to-base, collector open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open
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Thread Series Designator
unf
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Nominal Thread Size
0.190 inches
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Facility Quantity
1
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Overall Width Across Flats
0.424 inches minimum and 0.437 inches maximum
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Mounting Method
threaded stud