VBE890-2N2876
Semiconductor Devices and Associated Hardware
TRANSISTOR
VBE890-2N2876
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Current Rating Per Characteristic
2.50 amperes source cutoff current maximum
-
Inclosure Material
metal
-
Power Rating Per Characteristic
18.0 watts small-signal input power, common-collector minimum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Overall Diameter
0.320 inches minimum and 0.360 inches maximum
-
Semiconductor Material
silicon
-
Special Features
junction pattern arrangement: npn
-
Internal Configuration
junction contact
-
Overall Length
0.215 inches minimum and 0.320 inches maximum
-
Voltage Rating In Volts Per Characteristic
4.0 maximum breakdown voltage, emitter-to-base, collector open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open
-
Thread Series Designator
unf
-
Nominal Thread Size
0.190 inches
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Facility Quantity
1
-
Overall Width Across Flats
0.424 inches minimum and 0.437 inches maximum
-
Mounting Method
threaded stud