VBE890-2N2876

Semiconductor Devices and Associated Hardware

TRANSISTOR

VBE890-2N2876

5961-00-722-1266

5961 - Semiconductor Devices and Associated Hardware

Thales Nederland

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Current Rating Per Characteristic

    2.50 amperes source cutoff current maximum

  • Inclosure Material

    metal

  • Power Rating Per Characteristic

    18.0 watts small-signal input power, common-collector minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Overall Diameter

    0.320 inches minimum and 0.360 inches maximum

  • Semiconductor Material

    silicon

  • Special Features

    junction pattern arrangement: npn

  • Internal Configuration

    junction contact

  • Overall Length

    0.215 inches minimum and 0.320 inches maximum

  • Voltage Rating In Volts Per Characteristic

    4.0 maximum breakdown voltage, emitter-to-base, collector open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open

  • Thread Series Designator

    unf

  • Nominal Thread Size

    0.190 inches

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Facility Quantity

    1

  • Overall Width Across Flats

    0.424 inches minimum and 0.437 inches maximum

  • Mounting Method

    threaded stud

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
Read more...

Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
Read more...

Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
Read more...