2N914
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N914
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
360.0 milliwatts maximum collector power dissipation
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Mounting Method
terminal
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Internal Junction Configuration
npn
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Overall Diameter
0.276 inches maximum
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
40.0 maximum breakdown voltage,collector-to-base,emitter open and 15.0 maximum breakdown voltage,collector-to-emitter,base open and 5.0 maximum breakdown voltage,emitter-to-base,collector open
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Configuration
junction contact
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Terminal Length
0.500 inches minimum
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Overall Length
0.210 inches maximum