2N829

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N829

5961-00-727-2670

5961 - Semiconductor Devices and Associated Hardware

Electronic Industries Association

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    pnp

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    germanium

  • Voltage Rating In Volts Per Characteristic

    15.0 maximum breakdown voltage,collector-to-base,emitter open and 6.0 maximum breakdown voltage,collector-to-emitter,base open and 2.5 maximum breakdown voltage,emitter-to-base,collector open

  • Power Rating Per Characteristic

    150.0 milliwatts maximum collector power dissipation

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    200.00 milliamperes maximum collector current,dc and 3.00 microamperes maximum collector cutoff current,dc,emitter open

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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