MIS17035-1-1

Semiconductor Devices and Associated Hardware

TRANSISTOR

MIS17035-1-1

5961-00-727-3813

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

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Technical Characteristics

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    180.0 maximum collector to base voltage,dc and 130.0 maximum collector to emitter voltage/static/base open and 145.0 maximum collector to emitter reverse voltage and 8.0 maximum emitter to base voltage,dc

  • Current Rating Per Characteristic

    5.00 amperes maximum collector current,dc

  • Power Rating Per Characteristic

    2.0 watts maximum collector power dissipation

  • Internal Junction Configuration

    npn

  • Mounting Method

    terminal

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    3 tab,solder lug

  • Inclosure Material

    metal

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AS6081 Methods

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