2N1139
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1139
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
15.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Overall Diameter
0.335 inches minimum and 0.370 inches maximum
-
Internal Junction Configuration
npn
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
-
Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum
-
Internal Configuration
junction contact
-
Features Provided
hermetically sealed case
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
-
Semiconductor Material
silicon
-
Terminal Length
1.500 inches minimum
-
Overall Length
0.240 inches minimum and 0.260 inches maximum
-
Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector preset
-
Specification/Standard Data
80131-release3419 professional/industrial association specification
-
Inclosure Material
metal