2N339

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N339

5961-00-730-4900

5961 - Semiconductor Devices and Associated Hardware

Texas Instruments Incorporated

TRANSISTOR

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Technical Characteristics

  • Terminal Circle Diameter

    0.210 inches nominal

  • Features Provided

    hermetically sealed case

  • Terminal Length

    1.500 inches minimum

  • Special Features

    junction pattern arrangement: npn

  • Current Rating Per Characteristic

    1.00 microamperes maximum collector cutoff current, dc, emitter open

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Maximum Operating Temp Per Measurement Point

    165.0 deg celsius junction

  • Power Rating Per Characteristic

    1.0 watts maximum collector power dissipation

  • Voltage Rating In Volts Per Characteristic

    55.0 maximum breakdown voltage, collector-to-base, emitter open and 55.0 maximum breakdown voltage, collector-to-emitter, base open and 1.0 maximum breakdown voltage, emitter-to-base, collector open

  • Mounting Method

    terminal

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.370 inches maximum

  • Overall Length

    0.360 inches minimum and 0.390 inches maximum

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

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