5LV5511-102-35

Semiconductor Devices and Associated Hardware

TRANSISTOR

5LV5511-102-35

5961-00-751-7632

5961 - Semiconductor Devices and Associated Hardware

Eads Deutschland Gmbh -Verteidigung

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Special Features

    junction pattern arrangement: pnp

  • Overall Diameter

    0.875 inches maximum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Terminal Type And Quantity

    1 case and 2 pin

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open

  • Mounting Facility Quantity

    2

  • Mounting Method

    unthreaded hole

  • Semiconductor Material

    germanium

  • Inclosure Material

    metal

  • Current Rating Per Characteristic

    6.00 amperes source cutoff current maximum and 5.00 microamperes zero-gate-voltage source current preset

  • Overall Length

    0.250 inches minimum and 0.450 inches maximum

  • Specification/Standard Data

    80131-release2880 professional/industrial association specification

Certified to
AS6081 Methods

Implementing Quality Procurement

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