JAN2N575
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N575
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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~1
voltage, static, collector open
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~1
data on certain environmental and performanc
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-emitter, base open and 55.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 60.0 maximum collector to base voltage/static/emitter open and 28.0 maximum emitter to base
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Thread Series Designator
unf
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Current Rating Per Characteristic
25.00 amperes source cutoff current maximum
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Terminal Type And Quantity
3 tab, solder lug
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Specification/Standard Data
81349-mil-s-19500/46 government specification
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Features Provided
hermetically sealed case
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Overall Length
0.365 inches minimum and 0.415 inches maximum
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Power Rating Per Characteristic
187.0 watts small-signal input power, common-collector minimum
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Semiconductor Material
germanium
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Inclosure Material
metal
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Nominal Thread Size
0.250 inches
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Overall Diameter
1.110 inches maximum