2N251
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N251
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Junction Configuration
pnp
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Inclosure Material
metal
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Semiconductor Material
germanium
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Mounting Method
unthreaded hole
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Mounting Facility Quantity
2
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Current Rating Per Characteristic
2.00 amperes source cutoff current maximum and 2.00 milliamperes zero-gate-voltage source current preset
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Overall Length
0.410 inches maximum
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Terminal Type And Quantity
1 case and 2 pin
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open
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Internal Configuration
junction contact
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Overall Diameter
0.800 inches maximum
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Power Rating Per Characteristic
12.0 watts small-signal input power, common-collector minimum
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Maximum Operating Temp Per Measurement Point
80.0 deg celsius junction
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Electrode Internally-Electrically Connected To Case
collector