2N251
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N251
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Internal Junction Configuration
pnp
-
Inclosure Material
metal
-
Semiconductor Material
germanium
-
Mounting Method
unthreaded hole
-
Mounting Facility Quantity
2
-
Current Rating Per Characteristic
2.00 amperes source cutoff current maximum and 2.00 milliamperes zero-gate-voltage source current preset
-
Overall Length
0.410 inches maximum
-
Terminal Type And Quantity
1 case and 2 pin
-
Features Provided
hermetically sealed case
-
Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open
-
Internal Configuration
junction contact
-
Overall Diameter
0.800 inches maximum
-
Power Rating Per Characteristic
12.0 watts small-signal input power, common-collector minimum
-
Maximum Operating Temp Per Measurement Point
80.0 deg celsius junction
-
Electrode Internally-Electrically Connected To Case
collector