2N2362
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2362
5961 - Semiconductor Devices and Associated Hardware
Joint Electron Device Engineering
TRANSISTOR
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Technical Characteristics
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Terminal Circle Diameter
0.200 inches minimum
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Mounting Method
terminal
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Power Rating Per Characteristic
60.0 milliwatts small-signal input power, common-collector absolute
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
-20.0 maximum collector to emitter voltage/static/base open and -20.0 maximum collector to base voltage/static/emitter open and -5.0 maximum emitter to base voltage, static, collector open
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-12
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Semiconductor Material
germanium
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Inclosure Material
metal
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Specification/Standard Data
80131-release4432 professional/industrial association specification
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Terminal Type And Quantity
4 uninsulated wire lead