2N3677
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3677
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Special Features
junction pattern arrangement: pnp
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Precious Material
gold
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Precious Material And Location
terminal surfaces gold
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Internal Configuration
junction contact
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum and 10.00 nanoamperes zero-gate-voltage source current preset
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Features Provided
hermetically sealed case
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-46
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Terminal Circle Diameter
0.095 inches minimum and 0.105 inches maximum
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Semiconductor Material
silicon
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Overall Length
0.060 inches minimum and 0.080 inches maximum
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Terminal Length
0.500 inches minimum
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Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector absolute
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Transfer Ratio
4.0 nominal static forward current transfer ratio, common-emitter
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 20.0 maximum breakdown voltage, collector-to-emitter, base open