2N2345
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N2345
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Special Features
internal junction configuration arrangement pnpn
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Specification/Standard Data
80131-release3889 professional/industrial association specification
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Inclosure Material
metal
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Power Rating Per Characteristic
10.0 milliwatts small-signal input power, common-collector blank
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Terminal Length
1.500 inches minimum
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
1.60 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakover voltage, dc
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
anode
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Overall Diameter
0.370 inches maximum
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Overall Length
0.260 inches maximum
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead