BACSH2K1
Semiconductor Devices and Associated Hardware
TRANSISTOR
BACSH2K1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.260 inches maximum
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Terminal Length
1.000 inches minimum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
emitter and 7.0 maximum breakdown voltage,emitter-to-base,collector open
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage,collector-to-base,emitter open and 40.0 maximum breakdown voltage,collector-to-emitter,with specified resistance between base and emitter and 70.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to
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Current Rating Per Characteristic
1.00 amperes maximum collector current,dc and 600.00 milliamperes maximum base current,dc
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Power Rating Per Characteristic
2.0 watts maximum total power dissipation
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Diameter
0.330 inches maximum
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Terminal Circle Diameter
0.210 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction