2N2101
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2101
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base voltage, static, collector open and 60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector-to-emitter, resistance between base and
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Overall Width Across Flats
0.687 inches nominal
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~1
emitter
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Specification/Standard Data
80131-release3363 professional/industrial association specification
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Thread Series Designator
unf
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Current Rating Per Characteristic
3.00 amperes source cutoff current maximum and 3.00 amperes source cutoff current blank
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Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector absolute
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
1.190 inches nominal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Nominal Thread Size
0.250 inches