2N2102
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2102
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
120.0 maximum collector to base voltage/static/emitter open and 80.0 maximum collector-to-emitter, resistance between base and emitter and 65.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static,
-
Special Features
junction pattern arrangement: npn
-
Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector absolute
-
~1
collector open
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Overall Length
0.260 inches maximum
-
Overall Diameter
0.370 inches maximum
-
Internal Configuration
junction contact
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Terminal Length
1.500 inches minimum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Current Rating Per Characteristic
1.00 amperes source cutoff current maximum
-
Specification/Standard Data
80131-release3961 professional/industrial association specification
-
Inclosure Material
metal