352-0501-000
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-0501-000
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 8.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Junction Configuration
npn
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Internal Configuration
junction contact
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Terminal Type And Quantity
3 uninsulated wire lead and 1 case
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Overall Diameter
0.335 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
0.330 inches maximum
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Specification/Standard Data
80131-release4537 professional/industrial association specification
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 1.00 amperes source cutoff current maximum
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector minimum