755-408709

Semiconductor Devices and Associated Hardware

TRANSISTOR

755-408709

5961-00-781-2926

5961 - Semiconductor Devices and Associated Hardware

Bae Systems National Security

TRANSISTOR

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Technical Characteristics

  • Semiconductor Material

    germanium

  • Inclosure Material

    metal

  • Overall Diameter

    0.220 inches nominal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector minimum

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Special Features

    junction pattern arrangement: pnp

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Current Rating Per Characteristic

    200.00 milliamperes source cutoff current maximum

  • Voltage Rating In Volts Per Characteristic

    2.5 maximum breakdown voltage, emitter-to-base, collector open and 15.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter

  • Terminal Length

    0.500 inches minimum

  • Overall Length

    0.188 inches nominal

  • Terminal Circle Diameter

    0.016 inches minimum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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