DMS 81016B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 81016B
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
0.50 amperes source cutoff current minimum and 1.20 amperes source cutoff current maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Inclosure Material
ceramic and metal
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Nominal Thread Size
0.164 inches
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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End Item Identification
an/glq-3
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Mounting Method
threaded stud
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Terminal Type And Quantity
41 pin
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector absolute
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to emitter voltage/static/base open and 70.0 maximum collector to base voltage/static/emitter open and 4.0 maximum emitter to base voltage, static, collector open
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn