2N5216A

Technical Characteristics

• Inclosure Material

  metal

• Mounting Facility Quantity

  1

• Mounting Method

  threaded stud

• Features Provided

  hermetically sealed case

• Overall Width Across Flats

  0.431 inches nominal

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  80.0 maximum breakdown voltage,collector-to-base,emitter open and 80.0 maximum breakdown voltage,collector-to-emitter,base open and 4.0 maximum breakdown voltage,emitter-to-base,collector open

• Current Rating Per Characteristic

  400.00 milliamperes maximum base current,dc and 1.50 amperes maximum collector current,dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius case

• Overall Length

  0.190 inches nominal

• Internal Configuration

  junction contact

• Electrode Internally-Electrically Connected To Case

  emitter

• Internal Junction Configuration

  npn

• Nominal Thread Size

  0.190 inches

• Power Rating Per Characteristic

  25.0 watts maximum collector power dissipation

• Thread Series Designator

  unf

• Terminal Type And Quantity

  1 threaded stud and 2 tab,solder lug