3TE440
Semiconductor Devices and Associated Hardware
TRANSISTOR
3TE440
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.431 inches nominal
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage,collector-to-base,emitter open and 80.0 maximum breakdown voltage,collector-to-emitter,base open and 4.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
400.00 milliamperes maximum base current,dc and 1.50 amperes maximum collector current,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Overall Length
0.190 inches nominal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
emitter
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Internal Junction Configuration
npn
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Nominal Thread Size
0.190 inches
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Power Rating Per Characteristic
25.0 watts maximum collector power dissipation
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 2 tab,solder lug