108H92
Semiconductor Devices and Associated Hardware
TRANSISTOR
108H92
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
1.281 inches nominal
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Nominal Thread Size
0.190 inches
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 2 wire hook
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Overall Length
1.108 inches nominal
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
25.0 maximum emitter to base voltage, static, collector open and 250.0 maximum breakdown voltage, collector-to-emitter, base open
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Current Rating Per Characteristic
7.50 amperes maximum collector current, dc and 5.00 amperes maximum base current, dc
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Power Rating Per Characteristic
150.0 watts maximum collector power dissipation
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Transfer Ratio
10.0 minimum static forward current transfer ratio, common-emitter
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Special Features
junction pattern arrangement: npn