5L5512-801-04

Technical Characteristics

• Inclosure Material

  metal

• Special Features

  internal junction configuration transistor npn

• Electrode Internally-Electrically Connected To Case

  collector

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.200 inches nominal

• Voltage Rating In Volts Per Characteristic

  45.0 maximum collector to emitter voltage/static/base open all transistor and 45.0 maximum collector to base voltage/static/emitter open all transistor and 6.0 maximum emitter to base voltage, static, collector open all transistor

• Overall Length

  0.260 inches maximum

• Semiconductor Material

  silicon all transistor

• Transfer Ratio

  150.0 minimum static forward current transfer ratio, common-emitter all transistor

• Current Rating Per Characteristic

  30.00 milliamperes source cutoff current maximum all transistor

• Features Provided

  hermetically sealed case

• Overall Diameter

  0.375 inches maximum

• Terminal Length

  1.500 inches minimum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Component Name And Quantity

  2 transistor

• Terminal Type And Quantity

  6 uninsulated wire lead

• Power Rating Per Characteristic

  1500.0 milliwatts small-signal input power, common-collector absolute all transistor