H5E3
Semiconductor Devices and Associated Hardware
TRANSISTOR
H5E3
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Nominal Thread Size
0.190 inches
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Overall Length
0.550 inches maximum
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Internal Configuration
junction contact
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Terminal Type And Quantity
3 tab, solder lug
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum and 3.50 amperes source cutoff current maximum
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Overall Diameter
0.650 inches maximum
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 28.0 maximum breakdown voltage, emitter-to-base, collector open
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Semiconductor Material
germanium
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Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector minimum
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Inclosure Material
metal
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Internal Junction Configuration
pnp