2N2018
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2018
5961 - Semiconductor Devices and Associated Hardware
Gilbert Engineering Co Inc/Incon
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.375 inches nominal
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Internal Configuration
junction contact
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
20.0 watts maximum collector power dissipation
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Mounting Facility Quantity
1
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Internal Junction Configuration
npn
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Overall Width Across Flats
0.437 inches nominal
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Nominal Thread Size
0.190 inches
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Voltage Rating In Volts Per Characteristic
150.0 maximum breakdown voltage, collector-to-base, emitter open and 125.0 maximum breakdown voltage, collector-to-emitter, base open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
500.00 milliamperes maximum base current, dc and 2.00 amperes maximum collector current, dc
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug