2N637B
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N637B
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Overall Height
0.562 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector preset
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Overall Length
1.573 inches maximum
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 0.50 amperes source cutoff current maximum of standard range
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Features Provided
hermetically sealed case
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Terminal Type And Quantity
1 case and 2 pin
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Semiconductor Material
germanium
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Inclosure Material
metal
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Specification/Standard Data
80131-release2210 professional/industrial association specification
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage, dc
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Overall Width
1.050 inches nominal