RM993CJ/3

Technical Characteristics

• Maximum Power Dissipation Rating

  200.0 milliwatts

• Case Outline Source And Designator

  t0-86 joint electron device engineering council

• Test Data Document

  12464-b77t0052 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Time Rating Per Chacteristic

  100.00 nanoseconds maximum propagation delay time, low to high level output and 55.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  dual 4 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Inclosure Configuration

  flat pack

• Body Width

  0.240 inches minimum and 0.260 inches maximum

• Output Logic Form

  diode-transistor logic

• Terminal Type And Quantity

  14 flat leads

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Design Function And Quantity

  2 flip-flop, j-k, clocked and 2 flip-flop, j-k, master slave

• Terminal Surface Treatment

  solder

• Body Length

  0.240 inches minimum and 0.275 inches maximum

• Features Provided

  monolithic and resettable and w/buffered output and synchronous and medium power and asynchronous and positive outputs and hermetically sealed and w/enable

• Body Height

  0.030 inches minimum and 0.070 inches maximum

• Inclosure Material

  ceramic and glass