2N4240
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N4240
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Overall Height
0.340 inches maximum
-
Overall Width
0.700 inches maximum
-
Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector minimum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
-
Electrode Internally-Electrically Connected To Case
collector
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Voltage Rating In Volts Per Characteristic
500.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, collector-to-emitter, base open and 300.0 maximum breakdown voltage, emitter-to-base, collector open
-
Features Provided
hermetically sealed case
-
Transfer Ratio
100.0 maximum static forward current transfer ratio, common-emitter
-
Semiconductor Material
silicon
-
Terminal Type And Quantity
2 pin and 1 case
-
Mounting Facility Quantity
2
-
Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Inclosure Material
metal
-
Overall Length
1.252 inches maximum